Intel Turbo-Charges Transistors with New Materials

[Matooba]

The prototype device was fabricated on a silicon wafer substrate, pointing towards eventual process synergy with the existing silicon infrastructure. By using a high-k dielectric, gate leakage for short channel devices was reduced by 1000x compared with a Schottky gate, while the electrical oxide thickness was reduced by 33%, leading to higher switching speeds, which in turn leads to improved chip performance.

READ MORE (http://www.xbitlabs.com/news/other/display/20091210233218_Intel_Turbo_Charges_Transistors_wit h_New_Materials.html)

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